Fully Self-Aligned Oxide-Semiconductor Field-Effect Transistors

Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates.

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs ...

Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

We present an efficient, fully quantum mechanical approach to calculating ballistic transport in fully-depleted silicon-on-insulator metal-oxide semiconductor field effect transistor devices in three dimensions and apply the technique to the calculation of threshold voltages for realistic devices with narrow channels. We illustrate the fact that each dopant configuration becomes exceedingly imp...

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and...